RIE equipment is a dry-etching device for semiconductors. It applies high-frequency power to two parallel plate-type electrodes facing each other to activate reactive gas in a plasma state to cause a chemical reaction to make the material to be etched into a volatile material and etch it. I use it.
The cathode-couple method, in which the wafer is placed on the applied electrode of high-frequency power, has a higher applied voltage than the anode-couple method, in which the wafer is placed on the ground electrode side, and can use high ion bombardment.
